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Transistor model
Results: 80

#	Item
41	A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET Henok Abebe and Vance Tyree MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del R Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Threshold voltage Transistors Electronic design MOSFET Polysilicon depletion effect Field-effect transistor Capacitance CMOS Electromagnetism Electrical engineering Electronic engineering
42	IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 22, NO. 10, OCTOBER[removed]A Compact Transregional Model for Digital CMOS Circuits Operating Near Threshold Add to Reading List Source URL: www.async.caltech.edu Language: English - Date: 2014-09-24 17:59:20 Electromagnetism Electronic design Logic families MOSFET Drain Induced Barrier Lowering Threshold voltage Field-effect transistor CMOS IC power supply pin Electronic engineering Electrical engineering Integrated circuits
43	Model # QB[removed]Watt Hybrid Driver Amplifier 2.0 – 6.0 GHz, 4 Watt Hybrid Driver Amplifier • High Saturated Output Power to 10 Watts Add to Reading List Source URL: micro.apitech.com Language: English - Date: 2014-05-08 14:28:30 Amplifiers Transistor Biasing Power supply Electronic circuits Cascode Electronic amplifier Electronic engineering Electronics Electromagnetism
44	Microsoft PowerPoint - wcm07_ekv3.ppt Add to Reading List Source URL: www.nsti.org Language: English - Date: 2007-07-11 13:40:15 Electrical engineering MOSFET Channel length modulation Integrated circuits Transistor model CMOS Transistor NQS Compact Software Electronic engineering Electronic design Electronics
45	HiSIM2.4.0: Advanced MOSFET Model for 45nm Technology Node and Beyond WCM, May 2007, Santa Clara M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki, H. J. Mattausch Add to Reading List Source URL: www.nsti.org Language: English - Date: 2007-07-11 13:42:17 Electronics International Electron Devices Meeting Insulated gate bipolar transistor Diode Technology Electronic engineering Power electronics MOSFET
46	PDF Document Add to Reading List Source URL: www.nsti.org Language: English - Date: 2006-06-09 07:16:09 Electrical engineering Electronic design automation Electronics Semiconductor device modeling Transistor model Computational science MOSFET BSIM Electronic engineering
47	PDF Document Add to Reading List Source URL: www.nsti.org Language: English - Date: 2006-06-09 07:14:16 Field-effect transistor Electronic engineering EKV MOSFET Model MOSFET
48	PDF Document Add to Reading List Source URL: www.nsti.org Language: English - Date: 2006-06-09 07:22:03 Threshold voltage Doping Electromagnetism Drain Induced Barrier Lowering Halo: Combat Evolved Transistor model Electrical engineering Games Reverse short-channel effect
49	Physical Compact Modeling Shiuh-Wuu Lee Technology CAD Division Intel Corporation S.W. Lee TCAD Division LTD Intel Corp. Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:29:56 Electronics Transistor model Intel Simulation Semiconductor process simulation Semiconductor device modeling Electronic design automation Electronic engineering Technology CAD
50	Compact bipolar transistor modeling Issues and possible solutions M. Schroter Chair for Electron Devices and Integrated Circuits University of Technology Dresden, Germany [removed] http://www.iee.et.tu-dresden.d Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:28:05 Bipolar junction transistor Transistor model Transistor Common collector Silicon-germanium Biasing Compact Software Electronic engineering Electrical engineering Electronics

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